IPP60R120P7

Manufacturer :

Infineon Technologies

Product Category :

Specialized ICs

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

95W Tc

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

120m Ω @ 8.2A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Number of Terminations :

3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

1544pF @ 400V

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

78A

Drain-source On Resistance-Max :

0.12Ohm

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Number of Elements :

1

ECCN Code :

EAR99

Vgs (Max) :

±20V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Series :

CoolMOS™ P7

Avalanche Energy Rating (Eas) :

82 mJ

Vgs(th) (Max) @ Id :

4V @ 410μA

RoHS Status :

ROHS3 Compliant

Packaging :

Tube