IPP50R190CE
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- Mfr.Part #
- IPP50R190CE
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 5
- Stock
- 11,309
- In Stock ：
- 11,309
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 18 Weeks
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 54 ns
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.19Ohm
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Turn On Delay Time :
- 9.5 ns
- Series :
- CoolMOS™ CE
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Power Dissipation :
- 127W
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Tc
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 127W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 550V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1137pF @ 100V
- Published :
- 2008
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 18.5A
- Vgs(th) (Max) @ Id :
- 3.5V @ 510μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 47.2nC @ 10V
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 6.2A, 13V
- Fall Time (Typ) :
- 7.5 ns
- Rise Time :
- 8.5ns
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPP50R190CE
N-Channel Tube 190m Ω @ 6.2A, 13V ±20V 1137pF @ 100V 47.2nC @ 10V TO-220-3
IPP50R190CEXKSA1 Overview
A device's maximal input capacitance is 1137pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 54 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 500V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (13V).
IPP50R190CEXKSA1 Features
a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 54 ns
IPP50R190CEXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R190CEXKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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