IPP100N08S207AKSA1
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- Mfr.Part #
- IPP100N08S207AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO220-3
- Stock
- 6,500
- In Stock ：
- 6,500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 100A
- Turn On Delay Time :
- 26 ns
- Power Dissipation-Max :
- 300W Tc
- Rise Time :
- 51ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 30 ns
- Max Dual Supply Voltage :
- 75V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 61 ns
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 16 Weeks
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 400A
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Series :
- OptiMOS™
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 7.1m Ω @ 80A, 10V
- Number of Elements :
- 1
- Power Dissipation :
- 300W
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Radiation Hardening :
- No
- Datasheets
- IPP100N08S207AKSA1
N-Channel Tube 7.1m Ω @ 80A, 10V ±20V 4700pF @ 25V 200nC @ 10V TO-220-3
IPP100N08S207AKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 61 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 26 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 75V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP100N08S207AKSA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 61 ns
based on its rated peak drain current 400A.
IPP100N08S207AKSA1 Applications
There are a lot of Infineon Technologies
IPP100N08S207AKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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