IPN60R2K1CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-223-3

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 60μA

Power Dissipation-Max :

5W Tc

ECCN Code :

EAR99

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

FET Type :

N-Channel

Published :

2013

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Number of Elements :

1

JESD-609 Code :

e3

Continuous Drain Current (ID) :

3.7A

FET Feature :

Super Junction

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Threshold Voltage :

3V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 800mA, 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Vgs (Max) :

±20V