IPI50R299CP
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- Mfr.Part #
- IPI50R299CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 9,978
- In Stock ：
- 9,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 12A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.299Ohm
- Pin Count :
- 3
- Turn-Off Delay Time :
- 80 ns
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Series :
- CoolMOS™
- Avalanche Energy Rating (Eas) :
- 289 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Fall Time (Typ) :
- 12 ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 550V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Rise Time :
- 14ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Packaging :
- Tube
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 6.6A, 10V
- Pulsed Drain Current-Max (IDM) :
- 26A
- Power Dissipation-Max :
- 104W Tc
- Power Dissipation :
- 104W
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 100V
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Halogen Free :
- Halogen Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2008
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Datasheets
- IPI50R299CP
N-Channel Tube 299m Ω @ 6.6A, 10V ±20V 1190pF @ 100V 31nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI50R299CPXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 289 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1190pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 550V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 550V.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 26A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI50R299CPXKSA1 Features
the avalanche energy rating (Eas) is 289 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 26A.
a 500V drain to source voltage (Vdss)
IPI50R299CPXKSA1 Applications
There are a lot of Infineon Technologies
IPI50R299CPXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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