IPF10N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

52W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

80 mJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Published :

2008

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Voltage - Rated DC :

25V

Transistor Element Material :

SILICON

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 20μA

JESD-30 Code :

R-PSSO-G3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

30A

Lead Free :

Contains Lead

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

210A

Peak Reflow Temperature (Cel) :

220

Input Capacitance (Ciss) (Max) @ Vds :

1358pF @ 15V

Current Rating :

30A

Rds On (Max) @ Id, Vgs :

10.4m Ω @ 30A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0104Ohm

Qualification Status :

Not Qualified

Pin Count :

3

Terminal Position :

Single