IPDH6N03LAG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

4.2 ns

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 15V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-252AA

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

25V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

OptiMOS™

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Element Configuration :

Single

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Case Connection :

DRAIN

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

50A

Power Dissipation-Max :

71W Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2005

Power Dissipation :

71W

Vgs(th) (Max) @ Id :

2V @ 30μA

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Turn-Off Delay Time :

23 ns

Voltage - Rated DC :

25V

RoHS Status :

RoHS Compliant

Current Rating :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.006Ohm

Number of Elements :

1

Rise Time :

5.4ns

ECCN Code :

EAR99