IPD33CN10NGATMA1

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Mfr.Part #
IPD33CN10NGATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 27A TO252-3
Stock
169,693
In Stock :
169,693

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
47 mJ
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
2
Power Dissipation-Max :
58W Tc
Terminal Finish :
Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
27A Tc
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4V @ 29μA
Halogen Free :
Halogen Free
Transistor Element Material :
SILICON
Terminal Position :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code :
TO-252AA
Turn-Off Delay Time :
17 ns
Continuous Drain Current (ID) :
27A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
18 Weeks
Rds On (Max) @ Id, Vgs :
33m Ω @ 27A, 10V
Transistor Application :
SWITCHING
Turn On Delay Time :
11 ns
Power Dissipation :
58W
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Fall Time (Typ) :
4 ns
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
1570pF @ 50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PSSO-G2
Series :
OptiMOS™
Pulsed Drain Current-Max (IDM) :
108A
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2007
Operating Mode :
ENHANCEMENT MODE
Max Dual Supply Voltage :
100V
Lead Free :
Contains Lead
Operating Temperature :
-55°C~175°C TJ
Mount :
Surface Mount
Number of Elements :
1
Terminal Form :
Gull wing
Pbfree Code :
yes
Case Connection :
DRAIN
Rise Time :
21ns
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Number of Pins :
3
Datasheets
IPD33CN10NGATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD33CN10NGATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IPD33CN10NGATMA1 pinout, IPD33CN10NGATMA1 datasheet PDF, IPD33CN10NGATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD33CN10NGATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD33CN10NGATMA1


N-Channel Tape & Reel (TR) 33m Ω @ 27A, 10V ±20V 1570pF @ 50V 24nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD33CN10NGATMA1 Overview


IPD33CN10NGATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IPD33CN10NGATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 47 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1570pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 27A.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 108A, which is its maximum rated peak drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The maximum dual supply voltage can be supported by 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IPD33CN10NGATMA1 Features


the avalanche energy rating (Eas) is 47 mJ
a continuous drain current (ID) of 27A
the turn-off delay time is 17 ns
based on its rated peak drain current 108A.

IPD33CN10NGATMA1 Applications


There are a lot of Infineon Technologies IPD33CN10NGATMA1 applications of single MOSFETs transistors.

  • DC/DC converters

  • Lighting, Server, Telecom and UPS.

  • Motor Drives and Uninterruptible Power Supples

  • DC-to-DC converters

  • Telecom 1 Sever Power Supplies

  • PFC stages, hard switching PWM stages and resonant switching

  • Synchronous Rectification

  • Battery Protection Circuit

  • Solar Inverter

  • Server power supplies

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