IPD320N20N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Published :

2015

Drain-source On Resistance-Max :

0.032Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

190 mJ

Vgs (Max) :

±20V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

34A

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

200V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4V @ 90µA

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Pin Count :

4

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

136A

Rds On (Max) @ Id, Vgs :

32m Ω @ 34A, 10V

Power Dissipation-Max :

136W Tc

Case Connection :

DRAIN