IPD320N20N3GATMA1
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- Mfr.Part #
- IPD320N20N3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 34A TO252-3
- Stock
- 337,891
- In Stock ：
- 337,891
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 190 mJ
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Continuous Drain Current (ID) :
- 34A
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-252AA
- Max Dual Supply Voltage :
- 200V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Mount :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- Published :
- 2008
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Series :
- OptiMOS™
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 136W Tc
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 34A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 100V
- Datasheets
- IPD320N20N3GATMA1
N-Channel Tape & Reel (TR) 32m Ω @ 34A, 10V ±20V 2350pF @ 100V 29nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD320N20N3GATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 190 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2350pF @ 100V.This device conducts a continuous drain current (ID) of 34A, which is the maximum continuous current transistor can conduct.With 200V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD320N20N3GATMA1 Features
the avalanche energy rating (Eas) is 190 mJ
a continuous drain current (ID) of 34A
IPD320N20N3GATMA1 Applications
There are a lot of Infineon Technologies
IPD320N20N3GATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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