IPD30N06S2L13ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

-

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C ~ 175°C (TJ)

ECCN Code :

EAR99

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.017 Ω

Number of Elements :

1

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

55 V

Power Dissipation (Max) :

136W (Tc)

Rds On (Max) @ Id, Vgs :

13mOhm @ 30A, 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS?

Supplier Device Package :

PG-TO252-3-11

Reference Standard :

AEC-Q101

Package :

Bulk

Number of Terminals :

2

Gate Charge (Qg) (Max) @ Vgs :

69 nC @ 10 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1800 pF @ 25 V

JEDEC-95 Code :

TO-252

Additional Feature :

ULTRA LOW RESISTANCE

DS Breakdown Voltage-Min :

55 V

Pulsed Drain Current-Max (IDM) :

200 A

Surface Mount :

yes

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

240 mJ

Vgs(th) (Max) @ Id :

2V @ 80μA

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Manufacturer :

Infineon Technologies AG

Factory Lead Time :

1 Week

Product Status :

Active

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel