IPD30N06S2L-13

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Qualification Status :

Not Qualified

Pbfree Code :

yes

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

55V

Vgs(th) (Max) @ Id :

2V @ 80μA

Pin Count :

4

Avalanche Energy Rating (Eas) :

240 mJ

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Power Dissipation-Max :

136W Tc

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.017Ohm

Drain Current-Max (Abs) (ID) :

30A

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

200A