IPD30N06S223ATMA2
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- Mfr.Part #
- IPD30N06S223ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A TO252-31
- Stock
- 17,115
- In Stock ：
- 17,115
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Published :
- 2006
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 24 ns
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 120A
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 21A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 901pF @ 25V
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 30A
- Rise Time :
- 23ns
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 10 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Max Dual Supply Voltage :
- 55V
- Fall Time (Typ) :
- 18 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 100W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Factory Lead Time :
- 10 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Series :
- OptiMOS™
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPD30N06S223ATMA2
N-Channel Tape & Reel (TR) 23m Ω @ 21A, 10V ±20V 901pF @ 25V 32nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N06S223ATMA2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 901pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 120A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 55V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPD30N06S223ATMA2 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 24 ns
based on its rated peak drain current 120A.
IPD30N06S223ATMA2 Applications
There are a lot of Infineon Technologies
IPD30N06S223ATMA2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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