IPD16CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

212A

Input Capacitance (Ciss) (Max) @ Vds :

3230pF @ 40V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Surface Mount :

yes

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

JESD-30 Code :

R-PSSO-G2

Series :

OptiMOS™

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

85V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

53A

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 61μA

Power Dissipation-Max :

100W Tc

Published :

2009

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.016Ohm

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

16m Ω @ 53A, 10V

DS Breakdown Voltage-Min :

85V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Pin Count :

4

Number of Elements :

1

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

107 mJ