IPD16CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

107 mJ

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2008

Power Dissipation-Max :

100W Tc

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

16m Ω @ 53A, 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

212A

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Drain-source On Resistance-Max :

0.016Ohm

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 50V

Transistor Element Material :

SILICON

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 61μA

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

53A

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING