IPD144N06NGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

14.4m Ω @ 50A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

50A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs(th) (Max) @ Id :

4V @ 80μA

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Case Connection :

DRAIN

Published :

2011

FET Type :

N-Channel

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Factory Lead Time :

25 Weeks

Reach Compliance Code :

Unknown

Pin Count :

4

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 30V

Number of Terminations :

2

Qualification Status :

Not Qualified

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

135W

Power Dissipation-Max :

136W Tc

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

200A

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

240 mJ