IPD13N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

25V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

30A

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1043pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 20μA

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

60 mJ

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0128Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

210A

Mounting Type :

Surface Mount

Surface Mount :

yes

JEDEC-95 Code :

TO-252AA

Series :

OptiMOS™

Pin Count :

4

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 5V

Number of Elements :

1

Power Dissipation-Max :

46W Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

25V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON