IPD12N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs (Max) :

±20V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Pin Count :

4

Transistor Application :

SWITCHING

Published :

2008

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

64 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 20μA

Number of Elements :

1

Drain-source On Resistance-Max :

0.0116Ohm

Terminal Form :

Gull wing

JESD-609 Code :

e3

Power Dissipation-Max :

52W Tc

Drain Current-Max (Abs) (ID) :

30A

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Element Material :

SILICON

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 30A, 10V

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE