IPD12CN10NGBUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Pin Count :

4

Power Dissipation-Max :

125W Tc

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Vgs(th) (Max) @ Id :

4V @ 83μA

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0124Ohm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 67A, 10V

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4320pF @ 50V

Pbfree Code :

No

Factory Lead Time :

8 Weeks

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

FET Type :

N-Channel

Additional Feature :

FAST SWITCHING

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA

Terminal Position :

Single

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

268A

Surface Mount :

yes

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

154 mJ

Transistor Application :

SWITCHING

Number of Elements :

1

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

67A