IPD11DP10NMATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Operating Temperature :

-55°C ~ 175°C (TJ)

Product :

MOSFET

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation :

125W

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 50 V

Vgs(th) (Max) @ Id :

4V @ 1.7mA

Qualification :

-

Channel Type :

P

Manufacturer :

Infineon

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Package :

Digi-Reel?

Power Dissipation (Max) :

3W (Ta), 125W (Tc)

Product Status :

Active

Product Category :

MOSFET

Channel Mode :

Enhancement

MSL :

MSL 1 - Unlimited

Maximum Operating Temperature :

+ 175 C

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

3.4A (Ta), 22A (Tc)

Continuous Drain Current Id :

22A

Subcategory :

MOSFETs

Package Type :

DPAK (TO-252)

FET Feature :

-

Rds On (Max) @ Id, Vgs :

111mOhm @ 18A, 10V

RoHS :

Details

Base Product Number :

IPD11D

Supplier Device Package :

PG-TO252-3

Series :

OptiMOS?

Packaging :

Cut Tape

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

Brand :

Infineon Technologies

Number of Channels :

1 Channel

Number of Elements per Chip :

1

FET Type :

P-Channel

Mounting Style :

SMD/SMT

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

P-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

100 V