IPD100N06S403ATMA1
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- Mfr.Part #
- IPD100N06S403ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A TO252-3-11
- Stock
- 38,079
- In Stock ：
- 38,079
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 150W Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Series :
- OptiMOS™
- Pulsed Drain Current-Max (IDM) :
- 400A
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 100A, 10V
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2005
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 128nC @ 10V
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 60V
- Drain Current-Max (Abs) (ID) :
- 100A
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPD100N06S403ATMA1
N-Channel Tape & Reel (TR) 3.5m Ω @ 100A, 10V ±20V 10400pF @ 25V 128nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD100N06S403ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 10400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 100A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 400A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPD100N06S403ATMA1 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 400A.
a 60V drain to source voltage (Vdss)
IPD100N06S403ATMA1 Applications
There are a lot of Infineon Technologies
IPD100N06S403ATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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