IPC80N04S403ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

JESD-30 Code :

R-PDSO-F3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Max Dual Supply Voltage :

40V

Terminal Form :

Flat

Mount :

Surface Mount

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, OptiMOS™

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

5720pF @ 25V

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Package / Case :

8-PowerVDFN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 60μA

Power Dissipation-Max :

100W Tc

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0033Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

215 mJ

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 40A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

Number of Pins :

8

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Mounting Type :

Surface Mount