IPC60N04S406ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240A

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Published :

2013

Max Dual Supply Voltage :

40V

Mounting Type :

Surface Mount

Number of Pins :

8

FET Type :

N-Channel

Lead Free :

Contains Lead

JESD-30 Code :

R-PDSO-F3

Drain-source On Resistance-Max :

0.006Ohm

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

63W Tc

Pbfree Code :

yes

Mount :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 25V

Package / Case :

8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 30μA

Case Connection :

DRAIN

Terminal Position :

Dual

Continuous Drain Current (ID) :

60A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

ECCN Code :

EAR99

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

120 mJ

Factory Lead Time :

26 Weeks