IPBE65R115CFD7AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tape and Reel (TR)

Supplier Device Package :

PG-TO263-7-11

Transistor Polarity :

N-Channel

Brand :

Infineon Technologies

Subcategory :

MOSFETs

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

Power Dissipation :

114W

Input Capacitance (Ciss) (Max) @ Vds :

1950 pF @ 400 V

Qualification :

AEC-Q101

Mounting Style :

SMD/SMT

Manufacturer :

Infineon

Operating Temperature :

-40°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

650 V

Channel Type :

N Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Continuous Drain Current Id :

21A

Minimum Operating Temperature :

- 40 C

FET Type :

N-Channel

FET Feature :

-

Vgs(th) (Max) @ Id :

4.5V @ 490μA

Base Product Number :

IPBE65R

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Tradename :

CoolMOS

Maximum Operating Temperature :

+ 150 C

Packaging :

Cut Tape

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

115mOhm @ 9.7A, 10V

Rise Time :

3 ns

Product Type :

MOSFET

Product Status :

Active

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Series :

CoolMOS?

Power Dissipation (Max) :

114W (Tc)