IPB47N10SL-26

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100 V

Input Capacitance (Ciss) (Max) @ Vds :

2500 pF @ 25 V

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

47A (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 2mA

Technology :

MOSFET (Metal Oxide)

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

TO-263AB

Pulsed Drain Current-Max (IDM) :

188 A

Transistor Element Material :

SILICON

Number of Terminals :

2

Factory Lead Time :

1 Week

Drain Current-Max (Abs) (ID) :

47 A

Rds On (Max) @ Id, Vgs :

26mOhm @ 33A, 10V

Terminal Position :

Single

Power Dissipation (Max) :

175W (Tc)

Surface Mount :

yes

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

135 nC @ 10 V

Pbfree Code :

yes

Package :

Bulk

FET Feature :

-

Avalanche Energy Rating (Eas) :

400 mJ

Package Shape :

RECTANGULAR

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Pin Count :

4

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

PG-TO263-3-2

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max (Abs) :

175 W

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Series :

SIPMOS®

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.04 Ω

DS Breakdown Voltage-Min :

100 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED