IPB34CN10NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

27A

JESD-609 Code :

e3

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

47 mJ

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Pin Count :

4

Drain-source On Resistance-Max :

0.034Ohm

Rds On (Max) @ Id, Vgs :

34m Ω @ 27A, 10V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

108A

Power Dissipation-Max :

58W Tc

Vgs(th) (Max) @ Id :

4V @ 29μA

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 50V

Number of Terminations :

2

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2