IPB26CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

85V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.026ohm

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

65 mJ

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 39μA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Drain Current-Max (Abs) (ID) :

35A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Terminations :

2

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

71W Tc

Drain to Source Voltage (Vdss) :

85V

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Published :

2006

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

26m Ω @ 35A, 10V

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 40V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

140A