IPB26CN10NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 39μA

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs (Max) :

±20V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

35A

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

65 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.026ohm

Rds On (Max) @ Id, Vgs :

26m Ω @ 35A, 10V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

71W Tc

Mount :

Surface Mount

Number of Terminations :

2

RoHS Status :

RoHS Compliant

Number of Pins :

3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

140A

Current - Continuous Drain (Id) @ 25°C :

35A Tc