HS54095TZ-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Operating Temperature :

150°C TJ

Published :

2009

Rds On (Max) @ Id, Vgs :

16.5 Ω @ 100mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

O-PBCY-W3

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 Short Body

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.2A

Vgs (Max) :

±30V

Terminal Form :

Wire

Mounting Type :

Through Hole

Number of Terminations :

3

Qualification Status :

Not Qualified

Number of Elements :

1

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

750mW Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

200mA

Input Capacitance (Ciss) (Max) @ Vds :

66pF @ 25V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Pin Count :

3

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)