HRF3205L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

175W (Tc)

Series :

-

Operating Temperature :

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss) :

55 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

8mOhm @ 59A, 10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Package :

Bulk

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Reach Compliance Code :

Unknown

Supplier Device Package :

I2PAK (TO-262)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

170 nC @ 10 V

FET Feature :

-

JEDEC-95 Code :

TO-262AA

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

55 V

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Pulsed Drain Current-Max (IDM) :

390 A

Product Status :

Active

Drain-source On Resistance-Max :

0.008 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4000 pF @ 25 V

Number of Elements :

1

Manufacturer :

Rochester Electronics LLC