HIP2101EIBT
- Mfr.Part #
- HIP2101EIBT
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 45,802
- In Stock :
- 45,802
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Mounting Type :
- Surface Mount
- Current - Peak Output (Source, Sink) :
- 2A, 2A
- Max Operating Temperature :
- 125°C
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Series :
- --
- Driven Configuration :
- Half-Bridge
- High Side Voltage - Max (Bootstrap) :
- 114V
- Temperature Grade :
- Automotive
- Width :
- 3.9mm
- Number of Outputs :
- 2
- Output Peak Current Limit-Nom :
- 2A
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Supply Voltage :
- 12V
- Number of Functions :
- 1
- Min Operating Temperature :
- -40°C
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Pin Count :
- 8
- Mount :
- Surface Mount
- Supply Voltage-Min (Vsup) :
- 9V
- Gate Type :
- N-Channel MOSFET
- Height Seated (Max) :
- 1.68mm
- JESD-30 Code :
- R-PDSO-G8
- Channel Type :
- Independent
- Published :
- 2001
- Supply Voltage-Max (Vsup) :
- 14V
- Packaging :
- Tape and Reel (TR)
- Number of Drivers :
- 2
- Input Type :
- Non-Inverting
- High Side Driver :
- yes
- Lead Free :
- Contains Lead
- Terminal Position :
- Dual
- Rise / Fall Time (Typ) :
- 10ns, 10ns
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Turn On Time :
- 0.056 µs
- Peak Reflow Temperature (Cel) :
- 240
- Number of Terminations :
- 8
- Supplier Device Package :
- 8-SOIC-EP
- Length :
- 4.89mm
- Voltage - Supply :
- 9 V ~ 14 V
- Logic Voltage - VIL, VIH :
- 0.8V, 2.2V
- Package / Case :
- SOIC
- Turn Off Time :
- 0.056 µs
- Base Part Number :
- HIP2101
- Datasheets
- HIP2101EIBT

Gate Drivers Intersil (Renesas Electronics Corporation) HIP2101EIBT Overview
Introducing the HIP2101EIBT, a robust half-bridge gate driver from Intersil (Renesas Electronics Corporation), designed to enhance the efficiency and performance of your power management systems. This product is a crucial component in modern electronic applications, offering precise gate drive capabilities which significantly improve the operational stability and response times of MOSFETs and IGBTs. Its compact 8SOIC package is engineered for optimized gate control in space-constrained applications, making the HIP2101EIBT an ideal choice for high-performance industrial systems and advanced consumer electronics that require reliable, high-speed switching functionalities.
HIP2101EIBT Features
The HIP2101EIBT gate driver is equipped with a range of features that ensure superior performance in demanding environments. Key features include integrated high and low-side drivers, bootstrap functionality with a high voltage capability of up to 100V, and an advanced circuit design that minimizes propagation delays and shoot-through risks. Additionally, its strong drive capability and wide operating temperature range make it exceptionally suitable for challenging industrial applications.
HIP2101EIBT Applications
- Motor Control Systems: Utilized in driving the high-side and low-side gates in motor controllers, providing reliable and efficient operation essential for industrial automation and electric vehicle drivetrains.
- Power Supply Units: Enhances performance in switch mode power supplies (SMPS) by facilitating faster switching speeds and improved efficiency, critical for reducing energy consumption and heat generation.
- Solar Inverters: Plays a pivotal role in solar energy systems, enabling rapid and safe switching that maximizes energy conversion and reduces overall system costs.
- Electric Vehicle (EV) Charging: Critical in the design of EV charging stations, where efficient power management and reliability are paramount for fast and safe vehicle charging operations.
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