HIP2100EIBZT

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Gate Drivers

Max Operating Temperature :

150°C

Max Output Current :

2A

Max Supply Voltage :

114V

Input Type :

Non-Inverting

Packaging :

Cut Tape

Base Part Number :

HIP2100

Power Dissipation-Max :

3.1W

Operating Temperature :

-55°C ~ 150°C (TJ)

Output Peak Current Limit-Nom :

2A

Driven Configuration :

Half-Bridge

Fall Time (Typ) :

10 ns

Terminal Finish :

Matte Tin (Sn) - annealed

JESD-609 Code :

e3

Voltage - Supply :

9 V ~ 14 V

Package / Case :

SOIC

Gate Type :

N-Channel MOSFET

Max Supply Current :

2.5mA

Current - Peak Output (Source, Sink) :

2A, 2A

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Number of Pins :

8

Supplier Device Package :

8-SOIC-EP

Interface IC Type :

HALF BRIDGE BASED MOSFET DRIVER

Rise / Fall Time (Typ) :

10ns, 10ns

Series :

--

Terminal Position :

Dual

Factory Lead Time :

20 Weeks

Logic Voltage - VIL, VIH :

4V, 7V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Width :

3.9mm

Number of Drivers :

2

Turn Off Time :

0.045 µs

Rise Time :

10ns

Lead Free :

Lead Free

Nominal Supply Current :

2.5mA

Turn-Off Delay Time :

8 ns

High Side Driver :

yes

Min Supply Voltage :

9V

Turn On Time :

0.045 µs

Temperature Grade :

Automotive

Number of Functions :

1

High Side Voltage - Max (Bootstrap) :

114V

Channel Type :

Independent

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Supply Voltage :

12V

Turn On Delay Time :

8 ns

Number of Terminations :

8

Min Operating Temperature :

-40°C

Current - Output :

2A

Published :

2001

Qualification Status :

Not Qualified