HAT2279H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation-Max :

25W Tc

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-G4

DS Breakdown Voltage-Min :

80V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

30A

Fall Time (Typ) :

9.5 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3520pF @ 10V

Number of Terminations :

4

Turn On Delay Time :

9.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Turn-Off Delay Time :

56 ns

Number of Elements :

1

Package / Case :

SC-100, SOT-669

Published :

2006

Rise Time :

14.5ns

Rds On (Max) @ Id, Vgs :

12m Ω @ 15A, 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Element Material :

SILICON

Power Dissipation :

25W

Drain to Source Voltage (Vdss) :

80V

Terminal Form :

Gull wing

Pin Count :

5

Number of Pins :

5

Terminal Position :

Single