HAT2267H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Turn On Delay Time :

7.5 ns

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Current Rating :

25A

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SC-100, SOT-669

Fall Time (Typ) :

5 ns

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 10V

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

80V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

16m Ω @ 12.5A, 10V

Continuous Drain Current (ID) :

25A

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

25W Tc

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

JESD-30 Code :

R-PSSO-G4

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Rise Time :

9ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Number of Terminations :

4

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

20

Pin Count :

5

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Pins :

5

Radiation Hardening :

No

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free