HAT2266H-EL-E
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- Mfr.Part #
- HAT2266H-EL-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A LFPAK
- Stock
- 13,920
- In Stock ：
- 13,920
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 23W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 30A
- Number of Pins :
- 5
- DS Breakdown Voltage-Min :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Pin Count :
- 5
- Mount :
- Surface Mount
- Power Dissipation :
- 23W
- Turn On Delay Time :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 10V
- Turn-Off Delay Time :
- 50 ns
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Number of Elements :
- 1
- JESD-609 Code :
- e4
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 4.5V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G4
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Rise Time :
- 15ns
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-100, SOT-669
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 5.5 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Datasheets
- HAT2266H-EL-E
N-Channel Tape & Reel (TR) 12m Ω @ 15A, 10V ±20V 3600pF @ 10V 25nC @ 4.5V 60V SC-100, SOT-669
HAT2266H-EL-E Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
HAT2266H-EL-E Features
a continuous drain current (ID) of 30A
the turn-off delay time is 50 ns
a 60V drain to source voltage (Vdss)
HAT2266H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2266H-EL-E applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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