HAT2202C-EL-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Renesas Electronics Corporation

Subcategory :

FET General Purpose Power

ECCN Code :

EAR99

Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

6 nC @ 4.5 V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

20 V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Drain-source On Resistance-Max :

0.055 Ω

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Supplier Device Package :

6-CMFPAK

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F6

Drain to Source Voltage (Vdss) :

20 V

Pbfree Code :

yes

Package :

Bulk

Number of Elements :

1

Reach Compliance Code :

Compliant

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

40mOhm @ 1.5A, 4.5V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Number of Terminals :

6

Drain Current-Max (Abs) (ID) :

3 A

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Package Shape :

RECTANGULAR

JESD-609 Code :

e6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand Name :

Renesas

FET Feature :

-

Vgs(th) (Max) @ Id :

1.4V @ 1mA

Power Dissipation-Max (Abs) :

0.9 W

Package / Case :

6-SMD, Flat Leads

Pin Count :

6

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

520 pF @ 10 V

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

200mW

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Form :

Flat

Product Status :

Obsolete