HAT2197R-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

16A

Drain-source On Resistance-Max :

0.0099Ohm

Number of Pins :

8

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8

Pbfree Code :

yes

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

25ns

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 10V

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Number of Elements :

1

ECCN Code :

EAR99

Fall Time (Typ) :

4.2 ns

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

45 ns

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 8A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Current Rating :

16A

Voltage - Rated DC :

30V