HAT2174H-EL-E
- Mfr.Part #
- HAT2174H-EL-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A LFPAK
- Stock
- 42,902
- In Stock :
- 42,902
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 5.5 ns
- Vgs (Max) :
- ±20V
- Published :
- 2005
- Current Rating :
- 20A
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2280pF @ 10V
- Number of Pins :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 80A
- Package / Case :
- SC-100, SOT-669
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 10A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 20A
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Power Dissipation-Max :
- 20W Tc
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Pin Count :
- 5
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSSO-G4
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 16 Weeks
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 31 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 33.5nC @ 10V
- Voltage - Rated DC :
- 100V
- Mounting Type :
- Surface Mount
- Rise Time :
- 13ns
- Turn On Delay Time :
- 18 ns
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.03Ohm
- Datasheets
- HAT2174H-EL-E

N-Channel Tape & Reel (TR) 27m Ω @ 10A, 10V ±20V 2280pF @ 10V 33.5nC @ 10V SC-100, SOT-669
HAT2174H-EL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2280pF @ 10V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 8V 10V volts (8V 10V).
HAT2174H-EL-E Features
a continuous drain current (ID) of 20A
the turn-off delay time is 31 ns
based on its rated peak drain current 80A.
HAT2174H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2174H-EL-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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