HAT2173N-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

FET General Purpose Power

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100 V

Brand Name :

Renesas

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

61 nC @ 10 V

Vgs(th) (Max) @ Id :

6V @ 20mA

Rds On (Max) @ Id, Vgs :

15.3mOhm @ 12.5A, 10V

Factory Lead Time :

1 Week

FET Feature :

-

Manufacturer :

Renesas Electronics Corporation

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

30 W

Pin Count :

8

Product Status :

Obsolete

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Technology :

MOSFET (Metal Oxide)

Surface Mount :

yes

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

100 A

Power Dissipation (Max) :

30W (Tc)

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

25A (Ta)

Package :

Bulk

Number of Terminals :

8

Drain Current-Max (Abs) (ID) :

25 A

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

4350 pF @ 10 V

Series :

-

ECCN Code :

EAR99

Number of Elements :

1

Operating Temperature :

150°C (TJ)

DS Breakdown Voltage-Min :

100 V

Reach Compliance Code :

Unknown

Supplier Device Package :

8-LFPAK-iV

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Package / Case :

8-PowerSOIC (0.154, 3.90mm Width)