HAT2172H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0092Ohm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

38 ns

Turn On Delay Time :

12 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Pin Count :

5

Package / Case :

SC-100, SOT-669

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 15A, 10V

Rise Time :

20ns

DS Breakdown Voltage-Min :

40V

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Fall Time (Typ) :

4.5 ns

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2420pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

30A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 1mA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Number of Pins :

5

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G4

Power Dissipation-Max :

20W Tc