HAT2170H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Factory Lead Time :

16 Weeks

Number of Terminations :

4

Vgs (Max) :

±20V

Published :

2005

Vgs(th) (Max) @ Id :

3V @ 1mA

Transistor Application :

SWITCHING

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Package / Case :

SC-100, SOT-669

JESD-30 Code :

R-PSSO-G4

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 22.5A, 10V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

44 ns

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 10V

Number of Pins :

5

Power Dissipation-Max :

30W Tc

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

180A

Fall Time (Typ) :

7.1 ns

Drain to Source Voltage (Vdss) :

40V

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

43ns

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Pin Count :

5

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

20

FET Type :

N-Channel

Continuous Drain Current (ID) :

45A