HAT2131R-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

350V

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Pbfree Code :

yes

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Rds On (Max) @ Id, Vgs :

3 Ω @ 450mA, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Published :

2009

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

3.2Ohm

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Pulsed Drain Current-Max (IDM) :

7.2A

DS Breakdown Voltage-Min :

350V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

900mA

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.9A

RoHS Status :

ROHS3 Compliant