HAT2096H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SC-100, SOT-669

Power Dissipation-Max :

20W Tc

Mounting Type :

Surface Mount

Number of Elements :

1

FET Type :

N-Channel

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rise Time :

49ns

Current - Continuous Drain (Id) @ 25°C :

40A Ta

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Pin Count :

5

Terminal Position :

Single

Vgs (Max) :

±20V

Current Rating :

40A

Pulsed Drain Current-Max (IDM) :

160A

ECCN Code :

EAR99

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

20

Turn On Delay Time :

20 ns

Number of Terminations :

4

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 10V

JESD-30 Code :

R-PSSO-G4

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

40A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 20A, 10V

Transistor Application :

SWITCHING

Number of Pins :

5

Turn-Off Delay Time :

62 ns

Fall Time (Typ) :

15 ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

14V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.01Ohm