H7N1002LS-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

100W Tc

Rds On (Max) @ Id, Vgs :

10mOhm @ 37.5A, 10V

Package / Case :

SC-83

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Rds On Max :

10 MΩ

Supplier Device Package :

4-LDPAK

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Operating Temperature :

150°C

Number of Elements :

1

Min Operating Temperature :

-55°C

Input Capacitance :

9.7nF

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Power Dissipation :

100W

Mount :

Surface Mount

FET Type :

N-Channel

Published :

2006

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

150°C TJ

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

9700pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

75A