GT650N15K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

68W (Tc)

Operating Temperature :

-55°C ~ 175°C (TJ)

Series :

-

Supplier Device Package :

TO-252

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

65mOhm @ 10A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 75 V

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

150 V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Technology :

MOSFET (Metal Oxide)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

FET Feature :

-