GT52N10T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

44.5 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

80A

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2626 pF @ 50 V

Power Dissipation (Max) :

227W

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Package :

Tube

Packaging :

Tube-packed

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

-

Package / Case :

TO-220

Drain to Source Voltage (Vdss) :

100 V

Product Status :

Active

Vgs (Max) :

±20V

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-220