GT100N12M

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-263

Power Dissipation (Max) :

120W (Tc)

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

3050 pF @ 60 V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

70A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 10 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10mOhm @ 35A, 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

120 V