GT035N06T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

60 V

Supplier Device Package :

TO-220

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 20A, 10V

Power Dissipation (Max) :

215W (Tc)

FET Feature :

-

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

5064 pF @ 30 V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package :

Tube

Technology :

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C :

170A (Tc)

Product Status :

Active

Package / Case :

TO-220-3

FET Type :

N-Channel