GKI10526
- Mfr.Part #
- GKI10526
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4A 8DFN
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 3.1W (Ta), 46W (Tc)
- Number of Terminals :
- 5
- JESD-30 Code :
- R-PDSO-F5
- Terminal Form :
- Flat
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- 8-PowerTDFN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Avalanche Energy Rating (Eas) :
- 47 mJ
- Supplier Device Package :
- 8-DFN (5x6)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1530pF @ 25V
- Transistor Application :
- SWITCHING
- FET Feature :
- -
- Vgs(th) (Max) @ Id :
- 2.5V @ 350μA
- Polarity/Channel Type :
- N-Channel
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Terminations :
- 5
- Continuous Drain Current (ID) :
- 4A
- Drain-source On Resistance-Max :
- 0.0542Ohm
- Packaging :
- Cut Tape (CT)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Published :
- 2014
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- ±20V
- Series :
- -
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 47.7m Ω @ 9.3A, 10V
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max :
- 3.1W Ta 46W Tc
- Number of Pins :
- 8
- Pulsed Drain Current-Max (IDM) :
- 40A
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Manufacturer :
- Sanken Electric Co Ltd
- Case Connection :
- DRAIN
- Product Status :
- Obsolete
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Lead Free :
- Lead Free
- Datasheets
- GKI10526

N-Channel Cut Tape (CT) 47.7m Ω @ 9.3A, 10V ±20V 1530pF @ 25V 23nC @ 10V 100V 8-PowerTDFN
GKI10526 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 47 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1530pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
GKI10526 Features
the avalanche energy rating (Eas) is 47 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 40A.
a 100V drain to source voltage (Vdss)
GKI10526 Applications
There are a lot of Sanken
GKI10526 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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