GCMX080B120S1-E1

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Mfr.Part #
GCMX080B120S1-E1
Manufacturer
SemiQ
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
SIC 1200V 80M MOSFET SOT-227
Stock
35
In Stock :
35

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Manufacturer :
SemiQ
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Type :
HIGH SPEED SWITCHING
Drive Voltage (Max Rds On, Min Rds On) :
20V
Maximum Operating Temperature :
+ 175 C
Configuration :
Single
Series :
-
Product Type :
Discrete Semiconductor Modules
Mounting Type :
Chassis Mount
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
58 nC @ 20 V
Rise Time :
4 ns
Supplier Device Package :
SOT-227
Package :
Tube
Power Dissipation (Max) :
142W (Tc)
Product :
Power MOSFET Modules
Input Capacitance (Ciss) (Max) @ Vds :
1336 pF @ 1000 V
FET Feature :
-
FET Type :
N-Channel
Product Status :
Active
Subcategory :
Discrete Semiconductor Modules
Manufacturer :
SemiQ
Package / Case :
SOT-227-4, miniBLOC
Operating Temperature :
-55°C ~ 175°C (TJ)
Vf - Forward Voltage :
3.8 V at 10 A
Rds On (Max) @ Id, Vgs :
100mOhm @ 20A, 20V
Minimum Operating Temperature :
- 55 C
Product Category :
Discrete Semiconductor Modules
Vgs (Max) :
+25V, -10V
Base Product Number :
GCMX080
Packaging :
Tube
Mounting Style :
Screw Mounts
Brand :
SemiQ
Drain to Source Voltage (Vdss) :
1200 V
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 10mA
Introducing Transistors - FETs, MOSFETs - Single SemiQ GCMX080B120S1-E1 from Chip IC,where excellence meets affordability. This product stands out with its Type:HIGH SPEED SWITCHING, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C ~ 175°C (TJ), GCMX080B120S1-E1 pinout, GCMX080B120S1-E1 datasheet PDF, GCMX080B120S1-E1 amp .Beyond Transistors - FETs, MOSFETs - Single SemiQ GCMX080B120S1-E1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 100mOhm @ 20A, 20V +25V, -10V 1336 pF @ 1000 V 58 nC @ 20 V 1200 V SOT-227-4, miniBLOC

GCMX080B120S1-E1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1336 pF @ 1000 V.This transistor requires a drain-source voltage (Vdss) of 1200 V.

GCMX080B120S1-E1 Features


a 1200 V drain to source voltage (Vdss)


GCMX080B120S1-E1 Applications


There are a lot of SemiQ
GCMX080B120S1-E1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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