GCMX080B120S1-E1

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Mfr.Part #
GCMX080B120S1-E1
Manufacturer
SemiQ
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
SIC 1200V 80M MOSFET SOT-227
Stock
35
In Stock :
35

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Manufacturer :
SemiQ
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
SOT-227
Manufacturer :
SemiQ
Operating Temperature :
-55°C ~ 175°C (TJ)
Product :
Power MOSFET Modules
Package / Case :
SOT-227-4, miniBLOC
Power Dissipation (Max) :
142W (Tc)
Package :
Tube
Drain to Source Voltage (Vdss) :
1200 V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Rds On (Max) @ Id, Vgs :
100mOhm @ 20A, 20V
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Type :
HIGH SPEED SWITCHING
Packaging :
Tube
Vf - Forward Voltage :
3.8 V at 10 A
Configuration :
Single
Mounting Style :
Screw Mounts
Product Category :
Discrete Semiconductor Modules
Maximum Operating Temperature :
+ 175 C
Gate Charge (Qg) (Max) @ Vgs :
58 nC @ 20 V
Vgs (Max) :
+25V, -10V
Series :
-
Mounting Type :
Chassis Mount
FET Feature :
-
Product Status :
Active
Product Type :
Discrete Semiconductor Modules
Vgs(th) (Max) @ Id :
4V @ 10mA
Brand :
SemiQ
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rise Time :
4 ns
Base Product Number :
GCMX080
RoHS :
Details
Subcategory :
Discrete Semiconductor Modules
Input Capacitance (Ciss) (Max) @ Vds :
1336 pF @ 1000 V
Minimum Operating Temperature :
- 55 C
Datasheets
GCMX080B120S1-E1
Introducing Transistors - FETs, MOSFETs - Single SemiQ GCMX080B120S1-E1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 175°C (TJ), Package / Case:SOT-227-4, miniBLOC, Type:HIGH SPEED SWITCHING, Mounting Type:Chassis Mount, GCMX080B120S1-E1 pinout, GCMX080B120S1-E1 datasheet PDF, GCMX080B120S1-E1 amp .Beyond Transistors - FETs, MOSFETs - Single SemiQ GCMX080B120S1-E1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 100mOhm @ 20A, 20V +25V, -10V 1336 pF @ 1000 V 58 nC @ 20 V 1200 V SOT-227-4, miniBLOC

GCMX080B120S1-E1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1336 pF @ 1000 V.This transistor requires a drain-source voltage (Vdss) of 1200 V.

GCMX080B120S1-E1 Features


a 1200 V drain to source voltage (Vdss)


GCMX080B120S1-E1 Applications


There are a lot of SemiQ
GCMX080B120S1-E1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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